发明名称 Method for measuring critical dimension of pattern on sample
摘要 In a pattern dimension measuring method for scanning a sample at a predetermined scanning pitch by a scanning probe as in a scanning electron microscope, forming a sample image using a scanning signal obtained from the sample, scanning a predetermined portion of a pattern to be measured in a sample image by said probe, and measuring a dimension of said predetermined portion by processing obtained scanning signal according to a predetermined algorithm, said scanning pitch is varied according to the case for positioning the pattern to be measured and the case for measuring the pattern dimension when observing in a low magnification, and said scanning pitch for measuring the pattern dimension is adjusted to be small, about a diameter of the probe.
申请公布号 US5750990(A) 申请公布日期 1998.05.12
申请号 US19960771325 申请日期 1996.12.20
申请人 HITACHI, LTD. 发明人 MIZUNO, FUMIO;SATOH, OSAMU
分类号 G01B11/00;G01B15/00;G01N23/04;G01Q30/02;G01Q30/04;G01Q60/24;H01J37/28;H01L21/027;H01L21/66;(IPC1-7):H01J37/28 主分类号 G01B11/00
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