| 发明名称 |
Surface polishing of silicon carbide electronic device substrate using CEO2 |
| 摘要 |
A silicon carbide substrate is dry-polished using chromium oxide Cr2O3, ion oxide Fe2O3, or cerium oxide CeO2 to obtain a good polished surface free of mechanical defects and with less crystal distortion. Films are then formed on the surface to create an improved electronic device.
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| 申请公布号 |
US5750434(A) |
申请公布日期 |
1998.05.12 |
| 申请号 |
US19950423841 |
申请日期 |
1995.04.18 |
| 申请人 |
FUJI ELECTRIC CO. LTD. |
发明人 |
URUSHIDANI, TATSUO;OGINO, SHINJI |
| 分类号 |
B24B1/00;C30B25/02;H01L21/304;H01L21/36;H01L29/24;H01L29/47;(IPC1-7):H01L21/306 |
主分类号 |
B24B1/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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