| 发明名称 |
Semiconductor light-emitting device and production method thereof |
| 摘要 |
PCT No. PCT/JP95/01447 Sec. 371 Date Mar. 21, 1996 Sec. 102(e) Date Mar. 21, 1996 PCT Filed Jul. 20, 1995 PCT Pub. No. WO96/03776 PCT Pub. Date Feb. 8, 1996A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga1-xInxN (0</=x</=0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.
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| 申请公布号 |
US5751013(A) |
申请公布日期 |
1998.05.12 |
| 申请号 |
US19960619483 |
申请日期 |
1996.03.21 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KIDOGUCHI, ISAO;ADACHI, HIDETO;ISHIBASHI, AKIHIKO;OHNAKA, KIYOSHI;BAN, YUZABURO;KUBO, MINORU |
| 分类号 |
H01L33/00;H01L33/02;H01L33/06;H01L33/32;H01L33/36;H01L33/64;H01S5/02;H01S5/022;H01S5/024;H01S5/042;H01S5/16;H01S5/20;H01S5/223;H01S5/30;H01S5/323;H01S5/327;(IPC1-7):H01L33/00;H01S3/19 |
主分类号 |
H01L33/00 |
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