| 摘要 |
PURPOSE:To make possible high speed automatic die bonding by coating the back of the semiconductor substrate with a low melting point metal layer. CONSTITUTION:The back of a silicone substrate 1 is coated with a titanium layer 4 and a gold-tin alloy metal 5 by means of a magnetron-spatting device for instance. A chip thus formed is press-bonded at a given place plated with gold in a semiconductor vessel 8 made of ceramic or the like by means of an automatic die bonder under the pressure of 50g, at 300 deg.C for 2 sec. With such an arrangement, only the addition of the process for coating the substrate with a metal layer enables a high speed automatic die bonding without damage to the appearance.
|
