发明名称 CIRCUIT AND METHOD FOR RAPID READING OF AN IMAGE CELL
摘要 Disclosed is a circuit and method for rapid reading of an image cell for an image sensor chip comprising a plurality of image cells in the form of a two dimensional array and a read-out logic designed to represent a high input signal dynamic on a reduced output signal dynamic. The light sensitive element of the image cell is connected to one of the main electrodes of a first MOS transistor (M0) and the gate of a second MOS transistor (M1) so that the gate and the other main electrode of the first MOS transistor (M0) are short-circuited and subjected to a constant potential (Vss) so that a logarithmic characteristic curve can arise and an output signal amplifier can be connected to the second main electrode of the second MOS transistor (M1). A method for rapid reading of an image cell is also disclosed. The invention is characterized in that another MOS transistor (Mr1) with the same type of charge carrier is connected in parallel to the first transistor, one main electrode of said other transistor being short-circuited with one main electrode of the first MOS transistor (M0), the other main electrode of said other transistor being short-circuited with the other main electrode of the first transistor MOS (M0), and a reset tension pulse can be fed to the gate electrode of the other MOS transistor (Mr1).
申请公布号 WO9819453(A2) 申请公布日期 1998.05.07
申请号 WO1997DE02529 申请日期 1997.10.30
申请人 INSTITUT FUER MIKROELEKTRONIK STUTTGART;SEGER, ULRICH;APEL, UWE;HOEFFLINGER, BERND;GRAF, HEINZ-GERD 发明人 SEGER, ULRICH;APEL, UWE;HOEFFLINGER, BERND;GRAF, HEINZ-GERD
分类号 H04N3/15;H04N9/04 主分类号 H04N3/15
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