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发明名称
Verfahren zur Herstellung von Einzelsubstraten aus einem Silizium-Halbleiterwafer
摘要
申请公布号
DE69409387(D1)
申请公布日期
1998.05.07
申请号
DE19946009387
申请日期
1994.10.24
申请人
NAOETSU ELECTRONICS CO., KUBIKI, NAKAKUBIKI, NIIGATA, JP
发明人
AKATSUKA, TAKESHI, NAKAKUBIKI-GUN, NIIGATA-KEN, JP;SATO, TSUTOMU, JOETSU-SHI, NIIGATA-KEN, JP
分类号
B28D5/00;H01L21/225;H01L21/304;(IPC1-7):H01L21/304
主分类号
B28D5/00
代理机构
代理人
主权项
地址
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