发明名称 |
HEAT TREATMENT APPARATUS |
摘要 |
A vertical type heat treatment apparatus for semiconductor wafers (W) which comprises a heat treatment furnace (19), in which internal atmosphere is heated to 600 DEG C or higher. In the heat treatment furnace (19), the wafers (W) are subjected to batch type treatment while placed on a boat (16). A vacuum preliminary chamber (102) is gastightly connected to an underside of the heat treatment furnace (19). Arranged in the vacuum preliminary chamber (102) are a horizontal conveying mechanism (201) and a vertical conveying mechanism (202) for conveying the boat (16). Both the mechanisms (201, 202) are supported by support members (29a, 33a) mounted on a mechanical base (28) in such a manner as to be independent of thermal deformation of the vacuum preliminary chamber (102). The vacuum preliminary chamber (102) and the support members (29a, 33a) are gastightly connected to each other by means of bellows (31b, 40b).
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申请公布号 |
WO9819334(A1) |
申请公布日期 |
1998.05.07 |
申请号 |
WO1997JP03772 |
申请日期 |
1997.10.20 |
申请人 |
TOKYO ELECTRON LIMITED;SAKATA, KAZUNARI;TANIFUJI, TAMOTSU;TSUKADA, AKIHIKO |
发明人 |
SAKATA, KAZUNARI;TANIFUJI, TAMOTSU;TSUKADA, AKIHIKO |
分类号 |
H01L21/22;B65G49/07;C23C16/54;C30B25/08;C30B31/10;C30B31/12;C30B35/00;H01L21/00;H01L21/205;H01L21/31;H01L21/324;H01L21/677;(IPC1-7):H01L21/31;H01L21/68;C23C16/46;C23C16/40 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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