Speicherzelle und Verfahren zur Herstellung einer nichtflüchtigen Speicherzelle

摘要

A single method is specified for the optional manufacture of a dual-gate cell, a split gate-cell, or a stacked-gate cell, in which a microtrench (8) is created in a first polysilicon layer (4). The microtrench (8) and an interpolydielectric (10) ensure electrical insulation of areas of the first polysilicon layer (4) from a second polysilicon layer (11). By adjusting a mask (12), any one of the three storage cells can be selected for manufacture. In addition, a dual-gate cell requiring exceptionally little space is created.