| 摘要 |
PROBLEM TO BE SOLVED: To form a resist pattern while suppressing fluctuation of film thickness by curing an antireflection film at a temperature causing no fluidization and then hard baking it at a temperature lower than an elevated glass transition point. SOLUTION: A conductive film 2A of polysilicon or polycide is formed covering an insulation film 1A having level difference on a silicon substrate and then an antireflection film 3A is formed by applying polyimide. The antireflection film 3A is crosslinked by curing to produce an antireflection film 3Ab having an elevated glass transition point. Subsequently, UV cure is performed sufficiently on a hot plate to elevate the glass transition point of the antireflection film 3Ab above about 180 deg.C in order to prevent variation in the shape due to fluidization of the antireflection film. A resist film 4B is then formed on the antireflection film 3Ac, irradiated with an exposing light 5A passed through a mask, baked and developed after exposure and the exposed part 6B is removed to obtain a resist pattern where dimensional fluctuation is suppressed at the level difference part and the vicinity thereof. |
