| 摘要 |
A high-frequency amplifier has a transistor having a transistor input terminal, a transistor output terminal, and ground radiation fins, a first dielectric board having a transistor input matching circuit, and a second dielectric board having a transistor output matching circuit. The transistor is mounted by bringing the ground radiation fins into tight contact with a common ground surface member. The first and second dielectric boards being mounted on the common ground surface member. The first and second dielectric boards are respectively formed with first and second ground conductors on common ground surface member sides thereof. The transistor input terminal and the transistor input matching circuit are connected to each other and so are the transistor output terminal and the transistor output matching circuit. A thin film conductive sheet is continuously inserted to extend from the gap between the first ground conductor and the common ground surface member to the gap between the second ground conductor and the common ground surface member through the gap between the first ground conductor and the common ground surface member. The first dielectric board, the ground radiation fins, and the second dielectric boards are in tight contact with the common ground surface member via the thin film conductive sheet so that the thin film conductive sheet is pressed and fixed between the first and second dielectric boards and the radiation fins, and the common ground surface member. <IMAGE> |
