发明名称 |
Thin-film semiconductor device and its manufacturing method and apparatus and thin-film semiconductor solar cell module and its manufacturing method |
摘要 |
<p>A method for manufacturing a thin-film semiconductor device configured to form the thin-film semiconductor device on a first substrate and thereafter transfer the thin-film semiconductor device from the first substrate to a second substrate, comprises the steps of: forming a porous layer containing a separation layer on the first substrate; forming the thin-film semiconductor device on the porous layer; and after bonding the second substrate different from the first substrate in contraction coefficient by cooling onto the thin-film semiconductor device, cooling the product by cooling means to produce a shear stress in the separation layer in the porous layer and to separate the thin-film semiconductor device from the first substrate along the separation layer. Another method for manufacturing a thin-film semiconductor device comprises the steps of: forming a porous layer containing a separation layer on the first substrate; forming the thin-film semiconductor device on the porous layer; and after bonding the second substrate onto the thin-film semiconductor device, irradiating an ultrasonic wave to separate the thin-film semiconductor device from the first substrate along the separation layer. <IMAGE></p> |
申请公布号 |
EP0840381(A2) |
申请公布日期 |
1998.05.06 |
申请号 |
EP19970118825 |
申请日期 |
1997.10.29 |
申请人 |
SONY CORPORATION |
发明人 |
MATSUSHITA, TAKESHI;NAKAGOE, MIYAKO;WESTWATER, JONATHAN;KUSUNOKI, MISAO;YAMAUCHI, KAZUSHI |
分类号 |
H01L27/142;H01L31/0224;H01L31/0392;H01L31/18;(IPC1-7):H01L31/18;H01L31/20;H01L31/039 |
主分类号 |
H01L27/142 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|