发明名称 Thin-film semiconductor device and its manufacturing method and apparatus and thin-film semiconductor solar cell module and its manufacturing method
摘要 <p>A method for manufacturing a thin-film semiconductor device configured to form the thin-film semiconductor device on a first substrate and thereafter transfer the thin-film semiconductor device from the first substrate to a second substrate, comprises the steps of: forming a porous layer containing a separation layer on the first substrate; forming the thin-film semiconductor device on the porous layer; and after bonding the second substrate different from the first substrate in contraction coefficient by cooling onto the thin-film semiconductor device, cooling the product by cooling means to produce a shear stress in the separation layer in the porous layer and to separate the thin-film semiconductor device from the first substrate along the separation layer. Another method for manufacturing a thin-film semiconductor device comprises the steps of: forming a porous layer containing a separation layer on the first substrate; forming the thin-film semiconductor device on the porous layer; and after bonding the second substrate onto the thin-film semiconductor device, irradiating an ultrasonic wave to separate the thin-film semiconductor device from the first substrate along the separation layer. <IMAGE></p>
申请公布号 EP0840381(A2) 申请公布日期 1998.05.06
申请号 EP19970118825 申请日期 1997.10.29
申请人 SONY CORPORATION 发明人 MATSUSHITA, TAKESHI;NAKAGOE, MIYAKO;WESTWATER, JONATHAN;KUSUNOKI, MISAO;YAMAUCHI, KAZUSHI
分类号 H01L27/142;H01L31/0224;H01L31/0392;H01L31/18;(IPC1-7):H01L31/18;H01L31/20;H01L31/039 主分类号 H01L27/142
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