| 摘要 |
PROBLEM TO BE SOLVED: To reduce a lead current, by forming a titanium oxide coat on a semiconductor silicon substrate, annealing this titanium oxide coat, and coating an upper-level electrode layer on the titanium oxide coat annealed. SOLUTION: Titanium oxide (TiO2 ) coat 12 is coated on a semiconductor silicon substrate 10. This titanium oxide coat 12 is, for example, coated on n<+> type silicon substrate or n<+> type polysilicon substrate in a cold wall low pressure chemical vapor deposition reactor and acts as a lower-level electrode for a memory cell capacitor. Next, the coated titanium oxide coat 12 is annealed. This annealing process is performed for about 30 minutes, for instance, at dry gas atmosphere at about 800 deg.C. Then, the titanium oxide coat 12 with its upper-level electrode 14 layer annealed is coated by active sputtering, electron beam or chemical vapor deposition method. By doing this, the leak current can be reduced. |
