发明名称 |
PROCESS TO OBTAIN A MULTI-ELEMENT INFRARED DETECTOR |
摘要 |
<p>An improved method for use in fabricating individual semiconductor radiation detectors on a chip is characterized by forming generally V-shaped grooves converging toward one another from opposite sides of the chip into the thickness dimension thereof. The grooves meet within the chip and serve to separate individual detectors.</p> |
申请公布号 |
GB1597581(A) |
申请公布日期 |
1981.09.09 |
申请号 |
GB19770051655 |
申请日期 |
1977.12.12 |
申请人 |
SELENIA INDUSTRIE ELETTRONISCHE ASSOCIATE SPA |
发明人 |
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分类号 |
H01L25/04;(IPC1-7):01L21/78 |
主分类号 |
H01L25/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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