| 摘要 |
PROBLEM TO BE SOLVED: To provide a formation method of a sensor device with a structure for preventing the generation of bubbles in an interface of a layer. SOLUTION: When a sensor device with a sensitive element and a thin-film transistor 252 is manufactured, a semiconductor layer, wherein semiconductor channel leads 260, 262 are formed, is manufactured to contain fine crystalline silicon (μc-Si). Theμc-Si prevents generation of bubbles in an upper surface and a lower surface of a semiconductor layer, when a sensitive element is manufactured in a silicon base layer successively. Theμc-Si layer is fixed, having hydrogen which is so little as to prevent generation of bubbles or fixed having a crystalline particle structure which can dissipate hydrogen so rapidly, as to prevent the generation of bubbles or formed providing an interface of the layer with sufficient stability for preventing the generation of bubbles.
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