发明名称 METHOD FOR CHEMICALLY AND MECHANICALLY POLISHING SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To reduce the unevenness of the polishing speed at the peripheral part of a wafer by making use of the fact that since the peripheral part of a wafer deforms in the direction of the back surface side, the pressure applied to the polishing pad is reduced correspondingly, and the deformation of the polishing pad at the periferal part of the wafer and the repulsive force caused by it are reduced. SOLUTION: This method consists of chemically and mechanically polishing a semiconductor wafer 26 which is pressed onto a polishing pad 27 from upward through a backing plate 22 and a backing film 23. In this case, the part constituting the peripheral part of the semiconductor wafer 26 reduces the pressing force against the polishing pad 27 more than the part constituting the inside part of the semiconductor wafer 26 to permit to obtain the evenness of the polishing speed at the peripheral part of the semiconductor wafer 26.
申请公布号 JPH10113859(A) 申请公布日期 1998.05.06
申请号 JP19960267282 申请日期 1996.10.08
申请人 OKI ELECTRIC IND CO LTD 发明人 SHIMOKAWA MASAAKI
分类号 B24B37/005;B24B37/04;B24B37/30;H01L21/304 主分类号 B24B37/005
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