| 摘要 |
PROBLEM TO BE SOLVED: To form a good resistor pattern, phosphor pattern, partitioning wall pattern, or semiconductor circuit pattern with high definition and a square cross section, by using a negative mask having narrower line width than a pattern width to be formed. SOLUTION: A negative mask having a line width narrower than a pattern width to be formed is used. In this case, the line width of the negative mask is 1/10 to 9/10 of the pattern width to be formed, and more preferably 1/3 to 7/10. If the line width of the negative mask is <=1/10 of the pattern width to be formed, large quantity of exposure light is required to obtain the desired pattern width, which increases the tact time in the production process. This is disadvantageous for the process. If the width is >=9/10, with enough exposure to harden the pattern, a significant effect of diffusion of light occurs, which increases the pattern width or does not produce a square cross section. |
