发明名称 Microelectronic device with thin film electrostatic discharge protection structure
摘要 Microelectronic devices are formed on a substrate of an integrated circuit. An electrically conductive ground or power plane, and an Electrostatic Discharge (ESD) protection layer are formed on the substrate. Terminals such as solder ball or wire bond pads are formed on the substrate, and are electrically connected to the devices. The protection layer is patterned such that portions thereof are disposed between the terminals and the plane to define vertical electrical discharge paths. The protection layer is formed of a material such as SurgX TM which is normally dielectric, and is rendered conductive in the discharge paths by an electrostatic potential applied to the terminals during an ESD event to shunt the electrostatic potential from the terminals to the plane. Alternatively, the protection layer can be formed between the terminals to define lateral discharge paths. <IMAGE>
申请公布号 EP0788161(A3) 申请公布日期 1998.05.06
申请号 EP19970300380 申请日期 1997.01.21
申请人 LSI LOGIC CORPORATION 发明人 HIVELY, JAMES W.
分类号 H01L27/04;H01L21/56;H01L21/60;H01L21/822;H01L23/31;H01L23/60;H01L23/62;H01L29/74 主分类号 H01L27/04
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