| 摘要 |
PURPOSE:To increase the drive capability with high speed operation and low power consumption, by providing two pieces of word line driving transistor (TR) driving the memory cell in parallel, in a word line driving circuit of a semiconductor memory. CONSTITUTION:A semiconductor memory cell consists mainly of a plurality of memory cells M1a, M1b-M1n, M2a, M2b-M2n, a plurality of bit lines Ba, Bb- Bn transferring this memory cell information, and a plurality of word lines W1 and W2 connecting the memory cells in matrix. The word lines W1 and W2 decode the data of a decoder line D with decoder transistors T1a and T1b of multi- emitter, and word line driving transistors T22a and T33b are driven. The word line driving transistors are used as parallel connection, allowing to drive with a large current. |
