发明名称 GAS REFINING METHOD AND DEVICE USED THEREFOR
摘要 <p>PROBLEM TO BE SOLVED: To provide a gas refining method by which the high-purity hydrogen (about 99.99999%) needed by a semiconductor factory is produced. SOLUTION: A gaseous mixture contg. H2 is introduced into a dehumidification stage to remove the moisture in the mixture, the mixture freed from moisture is introduced into a decarbonation stage to solidify and remove the gaseous carbon dioxide in the mixture, the mixture free of gaseous carbon dioxide is introduced into a catalysis stage to convert the gaseous carbon dioxide remaining in the mixture to gaseous methane and then introduced into a demethanation stage to solidify and remove the gaseous methane in the mixture, and the mixture freed from gaseous methane is introduced into a low-temp. adsorption stage to adsorb and remove the gaseous methane and and gaseous carbon monoxide remaining in the mixture, and high-purity hydrogen is obtained.</p>
申请公布号 JPH10114501(A) 申请公布日期 1998.05.06
申请号 JP19960267570 申请日期 1996.10.08
申请人 DAIDO HOXAN INC 发明人 YOSHINO AKIRA;KIYAMA HIROMI;MIYAMOTO ATSUSHI;KIKUCHI NOBUNAO
分类号 B01D53/04;B01D53/00;C01B3/50;C10L3/10;C10L10/14;(IPC1-7):C01B3/50 主分类号 B01D53/04
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