| 摘要 |
PURPOSE:To remove a resist layer used as a mask for dry etching without producing resist residue, and moreover, to keep the margin for corrosion due to the residual matter of the etching gas. CONSTITUTION:When a resist layer 1 used as a etching mask is removed after dry etching, the modified part 1a of the surface of the resist layer and deposited films 2 are preliminarily removed. The modified part 1a is produced by the chemical reaction during dry etching, and the films 2 are formed by deposition of reaction products during dry etching on the resist layer 1 and on the surface of the film 3 to be etched. |
