| 摘要 |
PROBLEM TO BE SOLVED: To reduce re-sticking of copper to the surface during chemical- mechanical polishing, by containing an appropriate amount of suppressing agent which reduces re-sticking of copper to the surface of a semiconductor device layer. SOLUTION: At chemical-mechanical polishing of the surface of the layer of a semiconductor device, a suppressing agent which reduces re-sticking of copper to the surface is contained by an amount effective to suppress re-sticking of copper (about 0.25-5g/l of composition). The suppressing agent is an aromatic- organic-compound comprising an aromatic six-membered ring selected out of the group including benzene ring, pyridine ring, pyrazine ring, benzoquinone ring, and melamine ring, and at least two hereto atoms selected out of the group including nitrogen atom, oxygen atom, and surfur atom which are in the aromatic ting or combined to the aromatic ring, preferably being benzotriazol. Then, the composition containing the copper-stuck suppressing agent is supplied to the surface of the semiconductor device, and the surface containing the suppressing agent is polished. Thereby, re-sticking of copper to the surface is reduced. |
