| 摘要 |
PROBLEM TO BE SOLVED: To suppress floating effect of substrate by providing source and drain regions of second conductivity type isolated through a first semiconductor layer of first conductivity type on the insulating surface of a substrate, a gate electrode having side wall of insulator on a channel region between the source and drain regions, and a second semiconductor layer of first conductivity type on the source region. SOLUTION: Source and drain regions 16a, 16b are formed on an SOI layer 6 formed on an insulating layer 4 and a single crystal silicon layer (CS layer) 18 having a conductivity type opposite to that of the source and drain regions 16a, 16b is formed thereon. The CS layer 18 and a gate electrode 10 are covered with an interlayer insulation layer 22 and a contact hole for making contact with the source and drain regions 16a, 16b is made through the interlayer insulation layer 22 and the CS layer 18. A source electrode 26a and a drain electrode 26b are then formed of a metal while filling the contact hole. A MOSFET having such a structure is isolated electrically from other elements through an isolation layer 8. According to the arrangement, substrate floating effect can be suppressed efficiently through a structure as simple as possible. |
