发明名称 MANUFACTURING METHOD OF GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To improve the light-emitting efficiency of a light-emitting element and reduce its chip size by providing its bonding positions in its corner portions. SOLUTION: On a sapphire substrate 1, an n-type layer 2 and a p-type layer 3 are laminated in succession to form a light-emitting element. Then, etching a corner portion of the p-type layer 3, an electrode 4 is formed in a corner portion of the n-type layer 2 to connect the electrode 4 with a lead frame by wire-bonding via a gold wire 7. Also, a linear electrode 5 is formed on the p-type layer 3. The position of the wire-bonding of the electrode 5 is provided in a corner portion of the p-type layer 3. That is, the bonding positions of the electrodes 4, 5 are made to be both the ends of the diagonal, as observed from the same plane side. Therefore, the area of the p-type layer 3 can be made large to make a light-emitting of an extensive area obtainable. Also, the light-emitting can be taken out to the outside with its reduced screening by a ball 6. As a result, the light-emitting efficiency of the light-emitting element can be improved.
申请公布号 JPH10117017(A) 申请公布日期 1998.05.06
申请号 JP19970330959 申请日期 1997.11.13
申请人 NICHIA CHEM IND LTD 发明人 YAMADA MOTOKAZU;NAKAMURA SHUJI
分类号 H01L33/32;H01L33/38;H01L33/42;H01L33/56;H01L33/62 主分类号 H01L33/32
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