发明名称 Process for producing, by etching and/or electroplating, annular zones in narrow holes
摘要 The invention relates to a process for producing, by etching and/or electroplating, annular zones in narrow holes. In order to produce breaks in the metallisation on the inner walls of holes in workpieces, which breaks are short in relation to the depth of the hole, or in order to generate narrow conductive annular zones on the shell face of holes, the holes are filled with a resist, e.g. photoresist and the workpiece is then immersed, at a defined reduced pressure (negative pressure) in a stripping medium which dissolves the resist. The liquid penetrates until it is stopped by the remaining air volume. In addition to the evacuation, the exposure time in the stripper is likewise important for the remaining resist ring width.
申请公布号 DE3132658(A1) 申请公布日期 1983.03.17
申请号 DE19813132658 申请日期 1981.08.18
申请人 SIEMENS AG 发明人 TRAUSCH,GUENTER,DIPL.-ING.;HOUBEN,WILFRIED,ING.
分类号 C23F1/02;C25D5/02;H01J9/14;H05K3/00;H05K3/10;H05K3/38;(IPC1-7):C23F1/02;C25D7/00;C25D3/14 主分类号 C23F1/02
代理机构 代理人
主权项
地址