发明名称 |
Semiconductor memory device |
摘要 |
A first interconnection frame is provided on a semiconductor substrate so as to surround a central circuit strip. A second interconnection frame is provided on first metal interconnection frame with an insulating film therebetween. Both ends of a supply line are in contact with second interconnection frame. There is a gap provided between both ends of a ground line and second interconnection frame. Ground line and first interconnection frame are connected, using a via hole provided in the insulating film. Thus, an improved dynamic random access memory in which the voltage levels of supply lines and ground lines are stabilized is provided.
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申请公布号 |
US5748549(A) |
申请公布日期 |
1998.05.05 |
申请号 |
US19960735835 |
申请日期 |
1996.10.23 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA;MITSUBISHI ELECTRIC ENGINEERING CO., LTD. |
发明人 |
KOMETANI, OSAMU;WAKANO, SHOICHI;ASAKURA, MIKIO |
分类号 |
G11C5/14;(IPC1-7):G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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