发明名称 |
Method for producing a transistor using anodic oxidation |
摘要 |
A method for producing a thin-film transistor (TFT) in which the gate electrode is offset from the source and drain without detriment to the characteristics of the device or to manufacturing yield, and a structure for such a TFT, are disclosed. A gate electrode is formed using a material capable of anodic oxidation, and a mask is formed on the gate electrode. Using a comparatively low voltage, a comparatively thick, porous anodic oxide film is formed on the sides of the gate electrode. The mask is then removed and using a comparatively high voltage a dense anodic oxide film is formed at least on the top of the gate electrode. Using the gate electrode having this anodic oxide on its top and sides as a mask, an impurity is introduced into the semiconductor film and an offset structure is obtained.
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申请公布号 |
US5747355(A) |
申请公布日期 |
1998.05.05 |
申请号 |
US19950455151 |
申请日期 |
1995.05.31 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KONUMA, TOSHIMITSU;SUGAWARA, AKIRA;TSUJI, TAKAHIRO |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L21/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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