EEPROM memory device with simultaneous read and write sector capabilities

摘要

A memory device having a memory array, a row decoding unit, a column decoding unit, and a control unit; the memory array presents global bit lines extending along the whole of the array and connected to respective local bit lines, one for each of the sectors; a switch is provided between the global bit lines and each respective local bit line to selectively connect a selected global bit line and only one of the associated local bit lines; and the switches are controlled by local decoding units over control lines, to address the sectors independently and so perform operations (read, erase, write) simultaneously in two different sectors in different rows and columns.