| 摘要 |
A method of fabricating a MOSFET device structure, featuring a double insulator spacer, and improved source and drain engineering, has been developed. A silicon nitride-silicon oxide, double spacer, is used to prevent thinning of the insulator spacer, during a buffered hydrofluoric acid procedure, used prior to a metal deposition and metal silicide formation. A lightly doped source and drain region is formed prior to creation of the silicon oxide spacer, a medium doped source and drain region is formed prior to creation of the silicon nitride spacer, and a heavily doped source and drain region is formed following the creation of the silicon nitride spacer. This source and drain configuration increases device performance and reliability.
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