| 摘要 |
The specification describes a discriminating photodiode for detection of 1.55 mu m signals used in wavelength multiplexed systems operating with 1.3 mu m and 1.55 mu m wavelengths. The device uses a semiconductor layered structure to absorb photons from the 1.3 mu m signal, and annihilate the photogenerated carriers, while passing the 1.55 mu m light to a photodetecting junction beneath the layered structure.
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