Method for manufacturing ISRC MOSFET

摘要

The present invention privides a method for manufacturing an ISRC MOSFET, comprising steps of forming an isolating layer through the LOCOS process, depositing a mask oxide layer, exposing only the part of silicon substrate for forming the channel and shallow junction of source/drain layers, depositing the first nitride layer over the resultant substrate, dry-etching the first nitride layer to form a nitride side-wall, forming an oxide layer being recessed into the channel, wet-etching the nitride side-wall, forming two doped layers for the shallow source/drain by an N+ or P+ ion-implantation, depositing the second nitride layer, dry-etching for forming a nitride side-wall, forming a P- or N- doped layer between the two doped layers, forming a gate oxide layer on the P- or N- doped layer, depositing a poly-silicon layer, forming a poly-silicon gate by a llithography process and a dry-etching process, etching away the mask oxide layer, and ion-implanting for thick source/drain junction.