发明名称 |
MOS transistor switching circuit without body effect |
摘要 |
A switching circuit utilizing MOS transistors without body effect having a first transistor inserted with source and drain terminals between two connection terminals, and a second and third transistors inserted in series by means of their respective source and drain terminals between the first transistor and a ground. The gate terminal of the second transistor is connected to the gate terminal of the first transistor to which is applied a command signal. Upon switching a signal is applied in phase opposition to the command signal to the gate terminal of the third transistor. The substrates of the first and the second transistors are connected to a connection node between the second and third transistors. The substrate of the third transistor is connected to ground.
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申请公布号 |
US5748029(A) |
申请公布日期 |
1998.05.05 |
申请号 |
US19960624126 |
申请日期 |
1996.03.29 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
TOMASINI, LUCIANO;CASTELLO, RINALDO;CLERICI, GIANCARLO;BIETTI, IVAN |
分类号 |
H01L21/8234;H01L27/088;H03K17/16;H03K17/687;(IPC1-7):H03K17/687 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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