发明名称 Method for making a thin film resonant microbeam absolute
摘要 A micromechnical sensor having a polysilicon beam that is an integral part of the diaphragm resulting in a frequency of the beam that is a direct result of the pressure applied to the external surface of the diaphragm. Fabrication of this resonant microbeam sensor has no backside wafer processing, and involves a process and layout independent of wafer thickness for high yield and robustness. Both the diaphragm and resonant beam are formed from polysilicon. The sensor may have more than one resonant beam. The sensor beam or beams may be driven and sensed by electrical or optical mechanisms. For stress isolation, the sensor may be situated on a cantilevered single crystal silicon paddle. The sensor may be recessed on the isolating die for non-interfering interfacing with optical or electrical devices.
申请公布号 US5747705(A) 申请公布日期 1998.05.05
申请号 US19960778375 申请日期 1996.12.31
申请人 HONEYWELL INC. 发明人 HERB, WILLIAM R.;BURNS, DAVID W.
分类号 G01L9/00;H01L29/84;(IPC1-7):G01L1/10 主分类号 G01L9/00
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