发明名称 |
Selective etch for ii-vi semiconductors |
摘要 |
A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one of the semiconductor layers. The resultant device may include a semiconductor layer containing Mg. |
申请公布号 |
AU4802097(A) |
申请公布日期 |
1998.05.05 |
申请号 |
AU19970048020 |
申请日期 |
1997.09.26 |
申请人 |
MINNESOTA MINING AND MANUFACTURING COMPANY |
发明人 |
MICHAEL A HAASE;PAUL F. BAUDE;THOMAS J. MILLER |
分类号 |
H01S5/32;H01L21/465;H01S5/20;H01S5/223;H01S5/327;H01S5/347 |
主分类号 |
H01S5/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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