| 摘要 |
A computer implemented method provides for orientation and lay-out asymmetrical semiconductor devices. The sources of operating potential (20, 30) are identified. The PMOS transistors (22-28) are combined between the first (more positive) source of operating potential and a common node (12) into a combination block (48). The NMOS transistors (14-18) are combined between the common node and the second (less positive) source of operating potential into another combination block (52). The PMOS source terminals are coupled to more positive potentials, and the PMOS drain terminals are coupled to less positive potentials within the first combination block. The NMOS source terminals are coupled to less positive potentials, and the NMOS drain terminals are coupled to more positive potentials within the second combination block. For transmission gates (60, 62), a driving source is identified and the PMOS and NMOS source terminals are coupled to the driving source.
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