Static semiconductor memory device with precharging circuits having similar configuration of memory cells

摘要

In a static semiconductor memory device including a plurality of word lines (wl1, WL2, ...), a plurality of bit line pairs (BL1, BL1, ...), at least one precharging line (PRL1, PRL2, ...), a plurality of static memory cells (C11, ...) connected to one of the word lines and one of the bit line pairs, and a plurality of precharging circuits (PR11', ...), connected to the precharging line and one of the bit line pairs, thus charging the one of the bit line pairs, each of the precharging circuits has a similar configuration to one of the static memory cells. <IMAGE>