| 摘要 |
<p>In a semi conductor imaging detector, the distance D between the edge of the substrate (22) and the edgemost charge collection contact (26) is made as small as possible, preferably less than 500 νm and/or less than 1/3 of the substrate thickness. Additionally or alternatively, a passivation layer is placed between the edgemost portion of the contact and the substrate surface and/or a field shaping conductor adjacent to the surface. A field shaping region may also be arranged outside the edge of the substrate and may encircle each detector device, or it may encircle an arrangement of several devices. In such an arrangement, the spacing between adjacent detectors should be less than 500 νm. A shield may also be used to shield the edge of each detector, or the edge region of the arrangement of several detectors, from incident radiation. Such arrangements can reduce the effect of edge image deterioration caused by strong field non-uniformities at the detector edges.</p> |
