| 摘要 |
<p>A process for preparing a polycrystalline thin film by depositing particles produced from a target (36) on a substrate (A) and, at the same time, forming a polycrystalline thin film (B) formed of a constituent element of the target on the substrate (A), characterized by depositing the particles constituting the target (36) on the substrate (A) while diagonally applying an ion beam from an ion source (39) at an incident angle of 50 to 60° to the normal line (H) of the film forming face of the substrate (A), thereby forming a film, and by forming the film at 300 °C or below. This enables the formation of a polycrystalline thin film having excellent crystallographic orientation on a substrate. The target (36) may be yttrium or stabilized zirconia, and the thickness of the polycrystalline thin film (B) formed on the substrate (A) is preferably not less than 200 nm. Further, the formation of an oxide superconducting layer (C) on the polycrystalline thin film (B) can provide an oxide superconductor (22).</p> |
