Bi-Ti-O or Bi-W-O thin film of stable crystal phase is manufactured by forming a Bi-Ti-O of Bi-W-O thin film periodically in an environment including activated oxygen. A layered structure of Bi-Sr-Ca-Cu-O thin films and Bi-Ti-O or Bi-W-O thin films is manufactured by forming a Bi-Ti-O of Bi-W-O thin film periodically in an environment including activated oxygen. A stable superconductor thin film of high superconducting transition temperature is manufactured reproducibly by layering alternately a layered oxide superconductor thin film of Tl-Ba-Ca-Cu-O system and a Bi-W-O insulator thin film. <IMAGE>
申请公布号
DE69224214(T2)
申请公布日期
1998.04.30
申请号
DE1992624214T
申请日期
1992.06.02
申请人
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA, OSAKA, JP