| 摘要 |
<p>A high temperature superconductor (HTS) tri-layer structure (20) and a method for providing the same are described. Preferably two dimensional growth for all layers is provided resulting in smooth surfaces and highly crystalline layers. Full oxygenation of HTS under-layer(s) (24) is provided despite having thick intervening dielectric mid-layer (26). HTS over- and under-layers (28, 24) are preferably structurally and electrically similar and have high crystallinity, the HTS layers have high Tc (e.g. > 90 K) comparable to Tc of single layer superconductor layers and a high Jc (e.g. > 1,000,000 A/(cm x cm)), the tri-layer properties do not significantly degrade as the thickness of the layers is increased, and the dielectric mid-layer (26) has high resistivity and is substantially pin-hole free. The HTS tri-layer structure (20) of the present invention is achieved by using a capping-layer (25) to protect the HTS under-layer (24), by conducting an oxygen anneal to fully oxygenate the HTS layers, and/or by thermally matching the substrate (22) to the other layers (e.g. by using buffer layers (23) to overcome lattice mismatch problems). The present invention also provides an improved HTS capacitor having low loss at microwave frequencies and having a smaller size and/or greater capacitance per area unit when compared to conventional HTS capacitors.</p> |
