| 摘要 |
<p>In order to avoid problems arising from thickness variation of approximately 10% in a silicon nitride film formed by a reduced pressure CVD process, a reflective liquid crystal panel comprising a matrix of reflecting electrodes (14) formed on a substrate member (1), a transistor formed beneath to each reflection electrode for applying a voltage thereto, a silicon oxide film having a thickness of 500 to 2,000 angstroms is used as the passivation film. Where only light of one primary color is incident on the panel the thickness is set to a sub range, 1,300 to 1,900 angstroms for red light, 1,200 to 1,600 angstroms for green light, and 900 to 1,200 angstroms for blue light. <IMAGE></p> |
