Turn-off semiconductor device.

摘要

The appts. includes a cooling segment (15) laterally adjacent to a GTO thyristor segment with its cathode metallisation (9), n+ GTO emitter layer (10), p+ anode-emitter layers (11) and n+ short-circuits (2,2'). The cooling segment is sepd. from the cathode by control electrode metallisation (5) and an insulating layer (14). The cooling segment has either an n+ GTO emitter layer or a p-type base layer constituting a boundary (12) beneath the insulation with an overlying metallisation (13). The ignition threshold can be stabilised against temp. variation by an ohmic resistance in series with a diode between the control electrode and cathode.