| 摘要 |
A process for producing a silicon carbide shaped material, which comprises converting a polycarbodiimide resin into a shaped material of desired shape, carbonizing the shaped material, reacting the carbonized shaped material with silicon or a silicon-containing gas and, as necessary, forming, on the resulting silicon carbide shaped material, a silicon carbide layer by CVD. The process can alleviate the problems of the prior art and provide a silicon carbide shaped material which has a high purity and a high density and which generates no warpage even when made in a thin material such as film or the like. |
