| 摘要 |
A first insulating film is formed on the surface of a silicon substrate, and a first silicide wiring layer is deposited on the insulating film. A first mark is formed by transferring the pattern of a first reticle formed on the silicide wiring layer. A second insulation film is deposited on the mark and the first insulation film, and a second mark is formed on the first mark by transferring the pattern of a second reticle formed on the second insulation film. A second silicide wiring layer is deposited in the second mark and on the second insulating film. An anti dust deposit and a third mark are formed by transferring the pattern of a third reticle formed on the second silicide wiring layer. Thus, dusts from the marks produced by transferring the reticle inspection marks of the reticles can be effectively prevented to improve the yield of LSIs. |
