| 摘要 |
The present invention is a process for very low temperature chemical vapor deposition of silicon dioxide, comprising the steps of a) heating a substrate upon which silicon dioxide is to be deposited to a temperature in the range of approximately 150 to 500 DEG C. in a vacuum maintained at a pressure in the range of approximately 50 to 750 mTorr; b) introducing into said vacuum an organosilane containing feed and an oxygen containing feed, said organosilane containing feed consisting essentially of one or more compounds having the general formula: <IMAGE> wherein R1 and R2 are independently alkyl, alkenyl, alkynyl, or aryl, having C1 to C6, or R1 and R2 are combined to form an alkyl chain Cx(R3)2, where R3 is independently H, CxH2x+1, and x=1-6, and R4 is independently H, CyH2y+1 where y=1-6; and c) maintaining said temperature and vacuum thereby causing a thin film of silicon dioxide to deposit on the substrate.
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