| 摘要 |
PURPOSE:To prevent the generation of crack and falling off of crystal and to obtain the titled crystal having low strain and high extinction ratio, by carrying out liquid-phase epitaxial growth of a crystal while varying the growth temperature according to the variation of the composition of solution in a manner to equalize the lattice constant of the crystal to that of the substrate. CONSTITUTION:A crystal having a composition of formula (Re is one or more ions selected from Y<3+>, 4f rare earth element ion, Bi<3+>, Pb<2+>, Ca<2+>, Sr<2+>, Ba<2+>, Cd<2+> and Na<+>; Me is one or more ions selected from Fe<3+>, Ti<4+>, Zr<4+>, Cr<3+>, Sc<3+>, Lu<3+>, Al<3+>, Ga<3+>, Cu<2+>, Zn<2+>, Mg<2+>, Fe<2+>, Ni<2+>, Ge<4+>, V<5+> and Si<4+>) is grown on a substrate [e.g. Ca-Mg-Zr-substituted Gd3Ga5O12 substrate (lattice constant, a=12.49 A)] by liquid-phase epitaxial growth. In the above process, the growth temperature is varied within 950-650 deg.C according to the variation of the solution composition caused by the crystal growth in a manner to equalize the lattice constant of the grown crystal to that of the substrate.
|
