| 摘要 |
PCT No. PCT/DE94/01092 Sec. 371 Date Jun. 12, 1996 Sec. 102(e) Date Jun. 12, 1996 PCT Filed Sep. 20, 1994 PCT Pub. No. WO95/08775 PCT Pub. Date Mar. 30, 1995The integrated micromechanical sensor device contains a body with a substrate (1) on which an insulating layer (2) and thereon a monocrystalline silicon layer (3), are arranged, in which the silicon layer has trenches as far as the surface of the insulating layer, and the side walls of the trenches as well as the side of the silicon layer adjacent to the insulating layer have a first doping type (n+) and the silicon layer has a second doping type (n-) at least in a partial region of its remaining surface, in which the silicon layer has a transistor arrangement in a first region (TB) and a sensor arrangement in a second region (SB), for which the insulating layer (2) is partly removed under the second region. Such a sensor device has considerable advantages over known devices with regard to its properties and its production process.
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