| 摘要 |
PURPOSE:To enable bipolar transistors to be highly integrated without limiting the applicable numbers of transistors to any specified value by a method wherein CMOS transistors and bipolar transistors are vertically laminated to be formed into one body. CONSTITUTION:A drain and source (N<+> regions 8, 9) and N channel MOS transistor Q1 formed of the same impurity as an emitter region of an NPN type bipolar transistor Q3 are provided in a base region (P region 6) of the transistor Q3. Likewise, a source and drain (P<+> regions 7, 10) and a P channel MOS transistor Q2 formed of the same impurity as a base region of the transistor Q3 are provided in a collector region (N type well region4) of the transistor Q3. In such a constitution, the drain 8 of Q1 and the drain 10 of Q2 are electrically junctioned with each other; the drain 10 of Q2 is in common with the base region 6 of Q3; and the source 7 of Q2 and a collector terminal (N<+> electrode region 5) are electrically connected. |
