| 摘要 |
A semiconductor substrate 4 consisting of an n+-type substrate 1, an n--type silicon carbide semiconductor layer 2 and a p-type silicon carbide semiconductor layer 3, made of hexagonal crystal-based single crystal silicon carbide with the main surface having a planar orientation approximately in the (000+E,ovs 1+EE ) carbon face. An n+-type source region 5 is formed in the surface layer of the semiconductor layer 3, and a trench 7 runs from the main surface through the region 5 and the semiconductor layer 3 reaching to the semiconductor layer 2, and extending approximately in the [11+E,ovs 2+EE 0] direction. An n-type silicon carbide semiconductor thin-film layer 8 is provided on the region 5, the semiconductor layer 3 and the semiconductor layer 2 on the side walls of the trench 7, while a gate electrode layer 10 is formed on the inner side of a gate insulating film 9, a source electrode layer 12 is formed on the surface of the semiconductor region 5, and a drain electrode layer 13 is formed on the surface of the n+-type substrate 1.
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