| 摘要 |
PURPOSE:To obtain a phase synchronization type semiconductor laser array device characterized by high output power in a TJS type, by forming a plurality of active regions by a plurality of laminated active layers and clad layers, and first- and second-conductivity type regions, which divide the conductivity types of the active layers and the clad layers into two parts. CONSTITUTION:A Zn diffused P region is provided at a part directly beneath a P-side electrode 21 in clad layers 14-16 and active layers 17 and 18. Said P region 23 comprises a low-concentration P region 24 at the outer surface and a high-concentration P<+> region 25 at the inside. A current is made to flow between the electrodes 21 and 22. Then the current, which flows into a laser, selectively flows only through the active layers 17 and 18. Because the diffusion potential of the P-N junction formed between the clad layers 14-16 is larger than the diffusion potential at the first active layer 17 and the active layer 18. The inputted current results in radiation and recombination in active regions 27 and 28, and laser light is emitted. At this time, the thickness of the clad layer 15 is made as thin as several mum. Thus the laser light emitted from the active regions 27 and 28 can be synchronized in phase.
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