| 摘要 |
PURPOSE:To achieve single-crystallization efficiently by a method wherein a periodical unevenness is given to a part of an Si film formed on an amorphous substrate. CONSTITUTION:An Si film 2 is formed on an amorphous substrate 1 by depressurized CVD or the like and a periodical unevenness pattern 3 is formed by photolithography and the Si film 2 is covered with a high melting point thin film such as an SiO2 thin film and subjected to a heat treatment and single- crystallized. When a polycrystalline Si film is used as the Si film 2, the substrate 1 is made of material which is not softened at about 650 deg.C. When an amorphous Si film is used as the Si film 2, single-crystallization is achieved at about 300 deg.C. If a lattice structure with a period of 3mum or less is used in the part of the pattern 3, crystal orientation of crystallization can be uniform. Other lattice structures may be used in the unevenness pattern part and the optimum period may be selected. After the single-crystallization by a heat treatment, the cap film is removed to complete the single crystal film. With this constitution, a high quality single crystal film can be formed on an amorphous substrate.
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